the leader in silicon carbide solid state technology cpr3ap rev. - g sic ? technology mega bright leds CXXX-MB290-E1000 features applications ? mega bright ? high performance ? 11.0mw (460nm) deep blue ? 10.0mw (470nm) blue ? single wire bond structure ? class ii esd rating ? outdoor led video displays ? automotive dashboard lighting ? white leds ? backlighting description cree's mb series of mega bright leds are the next generation of solid state led emitters which combine highly efficient ingan materials with cree's proprietary sic substrate to deliver superior price performance for high intensity blue leds. these led chips have a geometrically enhanced vertical chip structure to maximize light extraction efficiency, and require only a single wire bond connection. cree's mb series chips are individually tested for conformity to optical and electrical specifications and the ability to withstand 1000v esd. these leds are useful in a broad range of applications such as outdoor full motion led video signs, automotive lighting and white leds, yet can also be used in high volume applications such as lcd backlighting. cree's mb series chips are compatible with most radial and smt led assembly processes. cxxx-mb 290-e1000 chip diagram topside view g sic led chip 300 x 300 m mesa (junction) 240 x 240 m gold bond pad 120 m diameter anode (+) h = 250 m backside metallization cathode (-) ingan sic substrate bottom view die cross section
cpr3ap rev. - g sic ? technology mega bright leds CXXX-MB290-E1000 maximum ratings at t a = 25c notes 1&3 CXXX-MB290-E1000 dc forward current 30ma peak forward current (1/10 duty cycle @ 1khz) 100ma led junction temperature 125c reverse voltage 5 v operating temperature range -20c to +80c storage temperature range -30c to +100c electrostatic discharge threshold (hbm) note 2 1000 v electrostatic discharge classification (mil-std-883e) note 2 class 2 typical electrical/optical characteristics at t a = 25c, if = 20ma note 3 part number forward voltage (v f, v) radiant flux (p, mw) reverse current [i(vr=5v), a] flux (mlm) peak wavelength ( p, nm) dominant wavelength ( d, nm) halfwidth ( d, nm) optical rise time ( , ns) typ max min typ max typ typ min typ max typ typ c460 3.6 4.0 8.0 11.0 10 880 458 455 460 465 26 30 c470 3.6 4.0 7.5 10.0 10 880 468 465 470 475 26 30 mechanical specifications note 4 CXXX-MB290-E1000 description dimension tolerance p-n junction area (m) 240 x 240 25 top area (m) 300 x 300 50 bottom area (m) 200 x 200 25 chip thickness (m) 250 25 au bond pad diameter (m) 120 20 au bond pad thickness (m) 1.2 0.5 back contact metal width (m) 15 -5, +10 notes: 1) maximum ratings are package dependent. the above ratings were determined using a t-1 3/4 package (with hysol os4000 epoxy) for characterization. seller makes no representations regarding ratings for packages other than the t-1 3/4 package used by seller. the forward currents (dc and pea k) are not limited by the g sic die but by the effect of the led junction temperature on the package. the junction temperature limit of 125c is a limit of the t-1 3/4 packa ge; junction temperature should be characterized in a specific package to determine limitations. assembly processing temperature must not exceed 350c (< 15 minutes). 2) product resistance to electrostatic discharge (esd) is measured by simulating esd using a rapid avalanche energy test (raet) . the raet procedures are designed to approximate the maximum esd ratings shown. seller gives no other assurances regarding the ability of products to withstand esd. 3) all products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assem bled and operated at 20 ma within the maximum ratings shown above. efficiency decreases at higher currents. typical values given are the average values expected by seller i n large quantities and are provided for information only. seller gives no assurances products shipped will exhibit such typical ratings. all measurements were made u sing lamps in t-1 3/4 packages (with hysol os4000 epoxy). optical characteristics were measured in a photoresearch spectrascan integrating sphere. illuminance e. 4) all products conform to the listed mechanical specifications within the tolerances shown. 5) caution: to obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80 m.
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